반도체·하드웨어 · 리포트
China's IMECAS demonstrates working 3nm gate-all-around transistors using stacked nanosheet structures, bypassing EUV lithography equipment.
Proof of advanced node capability without Western tools challenges export-control assumptions about China's fab autonomy, though volume production remains distant.
업계 전문지Slicast · 2026년 9월 21일 12:30 UTC · 글로벌 · 출처: Tom's Hardware
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