Samsung and Broadcom sign strategic $200 billion partnership for custom AI infrastructure silicon, accelerating development of advanced non-NVIDIA accelerators and ASICs for data centers.

Samsung Electronics and Broadcom have signed a memorandum of understanding valued at more than $200 billion through 2030 to expand their strategic collaboration across memory, foundry, and advanced packaging technologies. The partnership aims to address the expanding demands of next-generation AI infrastructure.

The formal announcement was made at the AI Summit in San Francisco, with Jinman Han, President and Head of Samsung Electronics' Foundry Business, and Hock Tan, President and CEO of Broadcom, leading the initiative alongside senior executives from both companies and representatives of the South Korean government.

Under the agreement, Samsung will supply industry-leading memory solutions, including specialized High Bandwidth Memory (HBM), designed to meet the performance requirements of Broadcom's AI accelerators. On the manufacturing front, Samsung will leverage its sub-2nm process technologies to produce Broadcom's silicon, including its high-speed Wireless Broadband Communications portfolio.

The collaboration also encompasses advanced packaging frameworks—specifically 2.3D and 2.5D integration architectures built on the 2nm process node—to enable high-density, energy-efficient interconnects between logic and memory components.

The partnership positions Samsung as an end-to-end provider spanning memory, logic, foundry, and heterogeneous packaging capabilities, while underscoring both companies' commitment to addressing the technical complexity of high-performance computing and AI workloads across global data center ecosystems.