엔비디아의 NVHBM 전략은 베이스 다이 가격이 코어 다이보다 3~4배 비싸다는 점을 활용해 HBM 부가가치의 대부분을 선점하며, SK하이닉스, 마이크론, 삼성을 상품화 가격대로 밀어붙이고 있다.

NVIDIA appears determined to dismantle the oligopolistic control over High Bandwidth Memory (HBM) maintained by the so-called “Big Three” memory manufacturers—Samsung, SK hynix, and Micron. The company is deploying its newly unveiled NVHBM DRAM solution as a strategic instrument to engineer a seismic paradigm shift in the sector.

As detailed in recent coverage, NVIDIA has officially introduced its NVHBM architecture. The strategic leverage lies in the underlying economics of HBM construction. Currently, a base die fabricated on TSMC’s 12-nanometer process costs three to four times as much as the corresponding DRAM core die. Transitioning to a 5-nanometer process would significantly widen this cost disparity. As highlighted in industry analysis: “If the TSMC 12 nm base die already costs three to four times the DRAM core die, a move to 5 nm would blow that gap open. More of the HBM bill would sit in the logic layer: controller, interface and custom IP, not the memory dies. That is the NVHBM point.” This deliberate reallocation of value is central to NVIDIA’s architectural strategy.

Reflecting these shifting economics, recent reports indicate that SK hynix is actively evaluating a potential relocation of its HBM base die fabrication from TSMC to Intel to mitigate manufacturing expenses. The memory manufacturer currently produces these base dies on TSMC’s 12nm process, where production costs run three to four times higher than those of a standard DRAM die.

Because the base die captures the majority of the economic value within any given HBM stack, NVIDIA’s NVHBM represents a calculated gambit designed to seize market initiative from the traditional Big Three. By transferring pricing power to the entity that controls the controller, NVIDIA effectively commoditizes the underlying DRAM products while securing dominance over the most lucrative segments of the HBM supply chain.