SK Hynix commits 54 trillion won (~$42 billion) to expand HBM manufacturing at Yongin and Cheongju plants.

SK Hynix announced on August 7th that its board of directors approved a combined investment of 54 trillion Korean won for two major semiconductor production facilities: 35.2 trillion won for the Y2 Fab in the Yongin Semiconductor Cluster and 19.1 trillion won for the M17 facility in Cheongju. This investment follows the company's mid-to-long-term expansion plan announced in June, which includes the Honam Semiconductor Cluster.

The Y2 facility will span 341,000 pyeong (approximately 1.127 million square meters) and is scheduled to begin construction in July 2027. The first clean room—a specialized environment with extreme dust and contamination controls—is targeted to open in June 2029, with the full investment period extending through October 2031. The facility will produce next-generation DRAM and high-bandwidth memory (HBM), with the construction budget covering production buildings, a research and development integration center, and auxiliary infrastructure including water treatment plants and substations.

SK Hynix is currently constructing Y1, the initial Fab in Yongin, targeting first-clean-room operation for February 2027. The company has significantly accelerated its timeline for completing all four planned Yongin cluster fabs—moving the target completion date from 2045 to 2033, a 12-year advancement.

In Cheongju, the M17 facility will function as a NAND flash production plant covering 206,000 pyeong. Construction begins in February 2027, with the first clean room opening targeted for December 2028 and the investment period concluding in April 2031. This expansion leverages Cheongju's existing NAND production infrastructure, which includes the M11, M12, and M15 facilities, as well as established power and water resources. SK Hynix plans to optimize investment efficiency by phased expansion of clean rooms and gradual deployment of production equipment aligned with market memory demand.