Micron Technology has laid out an AI memory roadmap spanning HBM, DRAM and NAND.

Micron Technology (NASDAQ:MU) outlined a technology and product roadmap centered on rising artificial-intelligence memory and storage requirements, including plans for next-generation DRAM, high-bandwidth memory (HBM), NAND, and advanced packaging.

During the company's technology and product leadership webinar, President and Chief Technology and Products Officer Scott DeBoer said AI is changing the role of memory from a supporting component to a central constraint on system performance, capacity, and cost per token. He said Micron aims to advance memory, storage, and compute together through higher bandwidth, larger capacities, improved power efficiency, and closer product collaboration with customers.

**DRAM roadmap and 3D transition**

DeBoer said Micron's 1-gamma DRAM node is in high-volume manufacturing and will serve as the foundation for products introduced over the coming 12 months. The company expects its 1-delta DRAM node to enter volume production in the second half of 2027, targeting a mid-20% improvement in bit density while optimizing the technology for AI-oriented products, including HBM5, vertical HBM, and vertical edge inference memory.

Micron also described work on 1-epsilon, 1-zeta, and eta-generation technologies, including wafer bonding, High-NA EUV, new materials, and other process innovations. DeBoer said the company has confidence in several additional generations of planar DRAM scaling before introducing 3D DRAM.