Micron: next-gen DRAM/NAND enter volume production H2 2027. HBM4 12-layer ramping 2x faster than HBM3E; >$1B cumulative HBM4 revenue. Memory margins surging from AI demand-driven HBM supply crunch.

Micron announced on June 24 that its next-generation DRAM and NAND nodes are tracking for volume production in the second half of 2027, signaling the company's progress on advanced memory nodes as AI infrastructure demand intensifies. The company reported that HBM4 12-layer products are ramping into production at twice the speed of its HBM3E 12-layer predecessor, indicating accelerating manufacturing readiness for higher-bandwidth memory critical to AI accelerators.

The memory manufacturer has already accumulated over $1 billion in HBM4 revenue, demonstrating significant customer demand for the latest generation high-bandwidth memory. This production traction reflects broader market dynamics: memory margins are surging across the industry as AI-driven demand for HBM continues to outpace supply, tightening allocations for GPU-bound compute infrastructure.

The H2 2027 timeline for volume production of next-gen DRAM and NAND underscores the extended roadmap for memory capacity expansion needed to support AI buildout. With HBM4 ramp accelerating and cumulative revenues already exceeding $1 billion, Micron is positioned to address near-term supply constraints while preparing next-generation capacity for the sustained infrastructure scaling AI workloads require.